Semiconductor Thermal Data: MOSFET
TO-247#800#16 to TO-263 D2PAK#60#85
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | current rating A (A) | on resistance mOhm (mOhm) | package type | power dissipation max W (W) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|
| MOSFET | TO-247#800#16 | 0.1 | 40 | 0.5 | 150 | 16 | 90 | TO-247 | 210 | 800 |
| MOSFET | TO-252 DPAK#30#30 | 0.5 | 80 | 3.5 | 175 | 30 | 6 | TO-252 DPAK | 29 | 30 |
| MOSFET | TO-263 D2PAK#60#85 | 0.5 | 50 | 2 | 175 | 85 | 5.5 | TO-263 D2PAK | 50 | 60 |
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