Semiconductor Thermal Data: IGBT
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | Vf V (V) | current rating A (A) | notes | package type | power dissipation max W (W) | switching loss typical mJ (mJ) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IGBT | TO-220#600#15 | 0.5 | 60 | 2 | 150 | 2 | 15 | 600V/15A IGBT TO-220; Vce_sat at Ic=15A Tj=25C; Esw at 300V 15A | TO-220 | 75 | 0.15 | 600 |
| IGBT | TO-220#600#25 | 0.5 | 60 | 1.4 | 150 | 1.9 | 25 | 600V/25A IGBT TO-220; e.g. IRG4BC20KD class; standard trench field stop | TO-220 | 107 | 0.25 | 600 |
| IGBT | TO-247#1200#40 | 0.1 | 40 | 0.45 | 150 | 2.7 | 40 | 1200V/40A IGBT TO-247; Vce_sat at Tj=125C; higher conduction loss than 600V | TO-247 | 333 | 1.5 | 1,200 |
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