Semiconductor Thermal Data: GaN_HEMT
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth jc C per W (degC/W) | Tj max C (degC) | Vce sat V (V) | current rating A (A) | notes | package type | power dissipation max W (W) | switching loss typical mJ (mJ) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|
| GaN_HEMT | QFN#100#50 | 1.2 | 120 | 3.5 | 50 | Enhancement-mode GaN HEMT 100V; GaNPX package; Rth_ja with recommended land pattern; Esw at 48V 10A | QFN | 50 | 0.05 | 100 |
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