Semiconductor Thermal Data: SiC_MOSFET
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | current rating A (A) | notes | on resistance mOhm (mOhm) | package type | power dissipation max W (W) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| SiC_MOSFET | TO-247#1200#30 | 0.1 | 40 | 0.4 | 175 | 30 | SiC MOSFET 1200V/30A TO-247; e.g. C2M0080120D; Ron at Tj=25C Vgs=20V | 80 | TO-247 | 250 | 1,200 |
| SiC_MOSFET | TO-247#1200#72 | 0.1 | 40 | 0.17 | 175 | 72 | SiC MOSFET 1200V/72A TO-247-4pin; Wolfspeed top-tier; Ron Tj=25C Vgs=20V | 18 | TO-247 | 625 | 1,200 |
| SiC_MOSFET | TO-247#1700#30 | 0.1 | 40 | 0.45 | 175 | 30 | SiC MOSFET 1700V/30A TO-247; high-blocking rail; utility-scale converters | 160 | TO-247 | 222 | 1,700 |
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