Semiconductor Thermal Data: MOSFET
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | current rating A (A) | notes | on resistance mOhm (mOhm) | package type | power dissipation max W (W) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| MOSFET | QFN#30#40 | 0.5 | 55 | 4.5 | 175 | 40 | 30V QFN exposed-pad; Rth_ja with minimal copper area; represents DrMOS class | 3.5 | QFN | 16 | 30 |
| MOSFET | SO-8#30#30 | 1 | 100 | 8 | 175 | 30 | 30V SO-8 dual or single; Rth_ja estimated with 1oz copper pour; Ron at Vgs=10V | 4 | SO-8 | 3 | 30 |
| MOSFET | SO-8#60#16 | 1 | 100 | 10 | 175 | 16 | 60V SO-8; low-current applications; Ron at Vgs=10V | 20 | SO-8 | 2 | 60 |
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