Semiconductor Thermal Data: thyristor_SCR

Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.

Mechanical Engineeringdevice_type: thyristor_SCR2 rows
device typedevice keyRth cs C per W (degC/W)Rth ja C per W (degC/W)Rth jc C per W (degC/W)Tj max C (degC)Vf V (V)current rating A (A)notespackage typepower dissipation max W (W)voltage rating V (V)
thyristor_SCRTO-220#400#80.56531251.18SCR/thyristor 400V/8A TO-220; Vf = on-state voltage at It=8A; used in phase-control AC applicationsTO-22027400
thyristor_SCRTO-247#800#250.1401.51251.325SCR 800V/25A TO-247; Pd_max=(125-25)/1.5=67W derated; high-current phase control; motor soft-start; Vf at IT=25A Tj=25CTO-24765800

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