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Semiconductor Thermal Data

Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.

Mechanical Engineering7 sections21 sample rowsKey: device_type

Attributes

package_type
voltage_rating_VV
current_rating_AA
Rth_jc_C_per_WdegC/W
Rth_cs_C_per_WdegC/W
Rth_ja_C_per_WdegC/W
Tj_max_CdegC
power_dissipation_max_WW
switching_loss_typical_mJmJ
on_resistance_mOhmmOhm
Vce_sat_VV
Vf_VV
notes

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