Semiconductor Thermal Data: power_diode
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | Vf V (V) | current rating A (A) | notes | package type | power dissipation max W (W) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| power_diode | TO-247#1200#30 | 0.1 | 40 | 1.5 | 175 | 1.8 | 30 | 1200V/30A ultra-fast diode TO-247; Pd_max=(175-25)/1.5=100W derated; Vf at If=30A Tj=25C; trr ~75ns; used in IGBT freewheeling position | TO-247 | 90 | 1,200 |
| power_diode | TO-247#600#30 | 0.1 | 40 | 1.2 | 175 | 1.5 | 30 | Fast-recovery diode 600V/30A TO-247 dual package; Rth_jc per half; Pd_max≈(175-25)/1.2=125W derated; Vf at If=30A Tj=25C; trr ~50ns | TO-247 | 115 | 600 |
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