Semiconductor Thermal Data: Schottky_diode

Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.

Mechanical Engineeringdevice_type: Schottky_diode3 rows
device typedevice keyRth cs C per W (degC/W)Rth ja C per W (degC/W)Rth jc C per W (degC/W)Tj max C (degC)Vf V (V)current rating A (A)notespackage typepower dissipation max W (W)voltage rating V (V)
Schottky_diodeSO-8#30#81100121750.45830V Schottky SO-8 dual; low-current applications; laptop/phone charging secondary rectifierSO-8130
Schottky_diodeTO-220#100#200.5654.51750.8520100V Schottky 20A TO-220; higher Vf than 45V; Rth_jc for dual package; e.g. MBR20100CT classTO-22022100
Schottky_diodeTO-220#45#200.5654.51750.552045V Schottky 20A TO-220; very low Vf; no reverse recovery loss; Vf at If=20A Tj=25CTO-2202245

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