Semiconductor Thermal Data: Schottky_diode
Thermal resistance and power dissipation data for semiconductor power devices — MOSFETs, IGBTs, SiC MOSFETs, GaN HEMTs, power diodes, Schottky diodes, and thyristor/SCRs. Covers TO-220, TO-247, TO-263 D2PAK, TO-252 DPAK, SO-8, QFN, and 62mm/34mm power module packages. Each record includes junction-to-case (Rth_jc), case-to-sink (Rth_cs), and junction-to-ambient (Rth_ja) thermal resistances, maximum junction temperature, power dissipation, switching loss, on-resistance or Vce_sat/Vf, and voltage/current ratings. 49 records across 7 device categories.
| device type | device key | Rth cs C per W (degC/W) | Rth ja C per W (degC/W) | Rth jc C per W (degC/W) | Tj max C (degC) | Vf V (V) | current rating A (A) | notes | package type | power dissipation max W (W) | voltage rating V (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Schottky_diode | SO-8#30#8 | 1 | 100 | 12 | 175 | 0.45 | 8 | 30V Schottky SO-8 dual; low-current applications; laptop/phone charging secondary rectifier | SO-8 | 1 | 30 |
| Schottky_diode | TO-220#100#20 | 0.5 | 65 | 4.5 | 175 | 0.85 | 20 | 100V Schottky 20A TO-220; higher Vf than 45V; Rth_jc for dual package; e.g. MBR20100CT class | TO-220 | 22 | 100 |
| Schottky_diode | TO-220#45#20 | 0.5 | 65 | 4.5 | 175 | 0.55 | 20 | 45V Schottky 20A TO-220; very low Vf; no reverse recovery loss; Vf at If=20A Tj=25C | TO-220 | 22 | 45 |
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