Wire Bonding Parameters: wedge_bond_gold
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire diameter um (um) | wire elongation pct (pct) | wire material | wire tensile strength gf (gf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| wedge_bond_gold | wb_au_25um | 50 | 180 | 80 | 150,150 | 10 | 25 | 350 | 75 | 25um Au wedge (thermosonic); used where ball bonding capillary access limited; second bond is stitch; lower loop profile than ball bond | 4 | 6.5 | 60 | 40 | 1 | 25 | 3 | gold | 9 |
| wedge_bond_gold | wb_au_50um | 100 | 180 | 80 | 150,150 | 12 | 55 | 450 | 100 | 50um Au wedge thermosonic; hybrid microcircuit standard; min pull 9g per MIL-STD-883 Cond B | 9 | 14 | 60 | 80 | 2 | 50 | 3 | gold | 32 |
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