Wire Bonding Parameters: wedge_bond_gold

Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.

Electrical Engineeringbond_type: wedge_bond_gold2 rows
bond typerecord idbond pad pitch min um (um)bond temp max C (C)bond temp min C (C)bond temp substrate Cbond time ms (ms)bonding force gf (gf)loop height max um (um)loop height min um (um)notespull strength min gf (gf)pull strength typical gf (gf)ultrasonic freq kHz (kHz)ultrasonic power mW (mW)wire diameter mil (mil)wire diameter um (um)wire elongation pct (pct)wire materialwire tensile strength gf (gf)
wedge_bond_goldwb_au_25um5018080150,15010253507525um Au wedge (thermosonic); used where ball bonding capillary access limited; second bond is stitch; lower loop profile than ball bond46.560401253gold9
wedge_bond_goldwb_au_50um10018080150,150125545010050um Au wedge thermosonic; hybrid microcircuit standard; min pull 9g per MIL-STD-883 Cond B91460802503gold32

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