Wire Bonding Parameters: ball_bond_gold
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | ball shear min gf (gf) | ball shear typical gf (gf) | ball to pad diameter ratio max (dimensionless) | ball to pad diameter ratio min (dimensionless) | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire diameter um (um) | wire elongation pct (pct) | wire material | wire tensile strength gf (gf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ball_bond_gold | bb_au_18um | 7.5 | 12 | 3.5 | 2.3 | 40 | 200 | 120 | 150 | 8 | 20 | 350 | 75 | 18um (0.7mil) Au; FAB EFO; thermosonically bonded at 120-150kHz; used for fine-pitch ICs; minimum pull per MIL-STD-883 Method 2011 | 3 | 4.5 | 120 | 30 | 0.7 | 18 | 3 | gold | 5.5 |
| ball_bond_gold | bb_au_25um | 12 | 20 | 3.5 | 2.5 | 50 | 200 | 120 | 150 | 10 | 30 | 400 | 75 | 25um (1.0mil) Au; most common fine-pitch size; min pull 4g per MIL-STD-883 Table I | 4 | 6 | 120 | 50 | 1 | 25 | 3 | gold | 9 |
| ball_bond_gold | bb_au_32um | 19 | 32 | 3.5 | 2.5 | 65 | 200 | 120 | 150 | 12 | 40 | 450 | 100 | 32um (1.25mil) Au; standard IC package bonding; min pull 5.5g per MIL-STD-883 | 5.5 | 8.5 | 120 | 65 | 1.25 | 32 | 3 | gold | 15 |
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