Wire Bonding Parameters: ball_bond_gold

Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.

Electrical Engineeringbond_type: ball_bond_gold3 rows
bond typerecord idball shear min gf (gf)ball shear typical gf (gf)ball to pad diameter ratio max (dimensionless)ball to pad diameter ratio min (dimensionless)bond pad pitch min um (um)bond temp max C (C)bond temp min C (C)bond temp substrate Cbond time ms (ms)bonding force gf (gf)loop height max um (um)loop height min um (um)notespull strength min gf (gf)pull strength typical gf (gf)ultrasonic freq kHz (kHz)ultrasonic power mW (mW)wire diameter mil (mil)wire diameter um (um)wire elongation pct (pct)wire materialwire tensile strength gf (gf)
ball_bond_goldbb_au_18um7.5123.52.3402001201508203507518um (0.7mil) Au; FAB EFO; thermosonically bonded at 120-150kHz; used for fine-pitch ICs; minimum pull per MIL-STD-883 Method 201134.5120300.7183gold5.5
ball_bond_goldbb_au_25um12203.52.55020012015010304007525um (1.0mil) Au; most common fine-pitch size; min pull 4g per MIL-STD-883 Table I46120501253gold9
ball_bond_goldbb_au_32um19323.52.565200120150124045010032um (1.25mil) Au; standard IC package bonding; min pull 5.5g per MIL-STD-8835.58.5120651.25323gold15

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