Wire Bonding Parameters: ribbon_bond

Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.

Electrical Engineeringbond_type: ribbon_bond2 rows
bond typerecord idbond pad pitch min um (um)bond temp max C (C)bond temp min C (C)bond temp substrate Cbond time ms (ms)bonding force gf (gf)loop height max um (um)loop height min um (um)notespull strength min gf (gf)pull strength typical gf (gf)ultrasonic freq kHz (kHz)ultrasonic power mW (mW)wire diameter mil (mil)wire material
ribbon_bondrb_al_100x25um150802025,251270800200Al ribbon 100x25um; power electronics; lower resistance and inductance than equivalent round wire; Semikron/Infineon power module standard152540803.937aluminum
ribbon_bondrb_au_25x12um75200100150,150830500100Au ribbon 25x12um (width x thickness); used in RF/microwave MMICs; lower inductance than round wire; wedge-only process5860450.9842gold

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