Wire Bonding Parameters: ribbon_bond
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire material |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ribbon_bond | rb_al_100x25um | 150 | 80 | 20 | 25,25 | 12 | 70 | 800 | 200 | Al ribbon 100x25um; power electronics; lower resistance and inductance than equivalent round wire; Semikron/Infineon power module standard | 15 | 25 | 40 | 80 | 3.937 | aluminum |
| ribbon_bond | rb_au_25x12um | 75 | 200 | 100 | 150,150 | 8 | 30 | 500 | 100 | Au ribbon 25x12um (width x thickness); used in RF/microwave MMICs; lower inductance than round wire; wedge-only process | 5 | 8 | 60 | 45 | 0.9842 | gold |
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