Wire Bonding Parameters: wedge_bond_aluminum
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire diameter um (um) | wire elongation pct (pct) | wire material | wire tensile strength gf (gf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| wedge_bond_aluminum | wb_al_125um | 200 | 100 | 20 | 25,25 | 15 | 100 | 600 | 200 | 125um Al; IGBT gate and emitter bonding; wedge bond area ~8x wire cross section; heel crack is primary failure mode | 30 | 50 | 60 | 120 | 5 | 125 | 1.5 | aluminum_1pct_si | 75 |
| wedge_bond_aluminum | wb_al_25um | 45 | 80 | 20 | 25,25 | 5 | 15 | 200 | 50 | 25um Al(1%Si); ultrasonic wedge bonding (no heat stage); room temp bonding; crescent/stitch second bond; used in RF and MEMS; bonding temp listed is stage temp range | 2.5 | 4 | 60 | 20 | 1 | 25 | 1.5 | aluminum_1pct_si | 4.5 |
| wedge_bond_aluminum | wb_al_50um | 80 | 80 | 20 | 25,25 | 8 | 30 | 300 | 75 | 50um Al(1%Si); MEMS and analog IC; ultrasonic only (no thermosonic) | 7 | 11 | 60 | 35 | 2 | 50 | 1.5 | aluminum_1pct_si | 14 |
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