Wire Bonding Parameters: heavy_wire_aluminum
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire diameter um (um) | wire elongation pct (pct) | wire material | wire tensile strength gf (gf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| heavy_wire_aluminum | hwa_200um | 400 | 100 | 20 | 25,25 | 20 | 180 | 1,200 | 400 | 200um Al; power module bonding (IGBT/diode); wedge bonding only; ultrasonic at 20kHz; typical loop height 400-1200um; fatigue life critical parameter | 60 | 110 | 20 | 200 | 8 | 200 | 1.5 | aluminum_1pct_si | 175 |
| heavy_wire_aluminum | hwa_375um | 750 | 100 | 20 | 25,25 | 25 | 350 | 2,000 | 600 | 375um (15mil) Al; high-power IGBT modules (600-1200A class); bonding force >250g; multiple parallel bonds per device; typical application temperature -40 to 175C | 175 | 280 | 20 | 450 | 15 | 375 | 1.5 | aluminum_1pct_si | 490 |
| heavy_wire_aluminum | hwa_500um | 1,000 | 100 | 20 | 25,25 | 30 | 550 | 2,500 | 800 | 500um (20mil) Al; largest standard heavy Al wire; press-pack power modules; AQG 324 automotive IGBT qualification applies | 280 | 450 | 20 | 700 | 20 | 500 | 1.5 | aluminum_1pct_si | 850 |
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