Wire Bonding Parameters: ball_bond_pcc
Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.
| bond type | record id | ball shear min gf (gf) | ball shear typical gf (gf) | ball to pad diameter ratio max (dimensionless) | ball to pad diameter ratio min (dimensionless) | bond pad pitch min um (um) | bond temp max C (C) | bond temp min C (C) | bond temp substrate C | bond time ms (ms) | bonding force gf (gf) | loop height max um (um) | loop height min um (um) | notes | pull strength min gf (gf) | pull strength typical gf (gf) | ultrasonic freq kHz (kHz) | ultrasonic power mW (mW) | wire diameter mil (mil) | wire diameter um (um) | wire elongation pct (pct) | wire material | wire tensile strength gf (gf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ball_bond_pcc | bb_pcc_25um | 13 | 22 | 3.5 | 2.5 | 50 | 220 | 160 | 190 | 10 | 30 | 350 | 75 | 25um Pd-coated Cu (PCC/PdCu); improved oxidation resistance vs bare Cu; no forming gas required at FAB; preferred for high-reliability automotive | 4.5 | 7.5 | 120 | 55 | 1 | 25 | 3.5 | palladium_coated_copper | 11.5 |
| ball_bond_pcc | bb_pcc_38um | 30 | 50 | 3.5 | 2.5 | 75 | 220 | 160 | 190 | 12 | 45 | 450 | 100 | 38um PCC; automotive IGBT and power IC; HTSL 150C/1000h qualified; pull strength 10-15% above bare Cu | 8 | 12.5 | 120 | 75 | 1.5 | 38 | 3.5 | palladium_coated_copper | 25 |
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