Wire Bonding Parameters: ball_bond_copper

Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.

Electrical Engineeringbond_type: ball_bond_copper3 rows
bond typerecord idball shear min gf (gf)ball shear typical gf (gf)ball to pad diameter ratio max (dimensionless)ball to pad diameter ratio min (dimensionless)bond pad pitch min um (um)bond temp max C (C)bond temp min C (C)bond temp substrate Cbond time ms (ms)bonding force gf (gf)loop height max um (um)loop height min um (um)notespull strength min gf (gf)pull strength typical gf (gf)ultrasonic freq kHz (kHz)ultrasonic power mW (mW)wire diameter mil (mil)wire diameter um (um)wire elongation pct (pct)wire materialwire tensile strength gf (gf)
ball_bond_copperbb_cu_18um9153.52.3352301702008253007518um Cu; thermosonic; forming gas (95N2/5H2) FAB atmosphere required to prevent oxidation; harder than Au — requires calibrated force3.55.5120400.7184copper7.5
ball_bond_copperbb_cu_25um15263.52.54523017020010353507525um Cu; lowest-resistance fine-pitch option; forming gas sheath required at FAB; Pd-Cu and Ag-Cu alloy variants exist58120601254copper13
ball_bond_copperbb_cu_38um33553.52.575230170200125045010038um Cu; higher current density; IMC formation faster than Au; requires tighter pad metallization control (Al pad preferred)8.513120801.5384copper27

This is a sample. Search the full wire bonding parameters dataset and 300+ more by creating a free account and accessing the database.

Get started for FREE

Related data