Wire Bonding Parameters

Semiconductor wire bonding process parameters — bond pad pitch, wire diameter, loop height, pull strength, ball shear strength, bonding temperature, ultrasonic frequency/power, bonding force, and wire mechanical properties by bond type and wire material. Covers ball bonding (Au, Cu, Pd-coated Cu), wedge bonding (Al, Au), ribbon bonding (Au and Al ribbon), and heavy-wire aluminum bonding for power modules. Minimum strength values per MIL-STD-883 Method 2011 and JEDEC JESD22-B116.