PZT-8 (Lead Zirconate Titanate hard-high power) vs Silicon Carbide (SiC reaction-bonded)
Property comparison of PZT-8 (Lead Zirconate Titanate hard-high power) and Silicon Carbide (SiC reaction-bonded), both ceramic.
| Property | PZT-8 (Lead Zirconate Titanate hard-high power) | Silicon Carbide (SiC reaction-bonded) | Difference |
|---|---|---|---|
| Poisson ratio | 0.31 | 0.17 | -45% |
| Density | 7,500 kg/m³ | 3,100 kg/m³ | -59% |
| Specific heat | 300 J/kg·K | 670 J/kg·K | +123% |
| Coefficient of thermal expansion | 1.3 1/K | 0.000004 1/K | -100% |
Difference is Silicon Carbide (SiC reaction-bonded) relative to PZT-8 (Lead Zirconate Titanate hard-high power). Values are taken from the representative row of each material; both materials may have multiple heat treatments or conditions on their individual pages.
Identification
- standard
- —
- standard
- ASTM
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